Journal
ADVANCED MATERIALS
Volume 23, Issue 36, Pages 4146-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201101511
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Funding
- European Community [248092]
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Multilevel Information Storage in Ferroelectric Polymer Memories Multibit memory devices based on the ferroelectric copolymer P(VDF-TrFE) (poly( vinylidenefluoride-trifluoroethylene)) are presented. Multilevel microstructures are fabricated by thermal imprinting of a spin-coated ferroelectric polymer film using a rigid Si template. Multibit storage in capacitors and thin-film transistor memory is realized by implementing imprinted ferroelectric polymer films as the insulator and gate dielectric layers, respectively.
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