Journal
ADVANCED MATERIALS
Volume 23, Issue 24, Pages 2753-2758Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201004572
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Funding
- Ministry of Education, Culture, Sports, Science, Technology of Japan [17069003, 17204022, 18710091, 22656003]
- Funding Program for Next Generation World-Leading Researchers
- Japan Science Society
- Grants-in-Aid for Scientific Research [17204022, 18710091, 23550208, 21224009, 22350082] Funding Source: KAKEN
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A new method for investigating light-emitting property in organic devices is demonstrated. We apply the ambipolar light-emitting transistors (LETS) to directly observe the recombination zone, and find a strong link between the transistor performance and the zone size. This finding unambiguously indicates that the light emission comes from the electric-field-induced p-i-n homojunction in ambipolar LETs.
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