Journal
ADVANCED MATERIALS
Volume 23, Issue 36, Pages 4183-+Publisher
WILEY-BLACKWELL
DOI: 10.1002/adma.201101376
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Funding
- Seoul Metropolitan Science Fellowship
- Korea Research Foundation
- Korean government [MOEHRD: 2010-0014680]
- National Research Foundation of Korea [2010-0014680] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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p-Type Conduction Characteristics of Lithium-Doped ZnO Nanowires p-type ZnO nanowires (NWs) based on a simple hydrothermal technique with a lithium dopant are demonstrated. It is demonstrated that Li substitution of Zn occurs because of thermally induced migration due to post-annealing in the presence of oxygen. The stable formation of p-type ZnO:Li NWs is revealed using a NW field-effect transistor and a simple n-type ZnO thin film/p-type annealed ZnO:Li NW homojunction diode.
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