4.8 Article

Resistive Switching Phenomena in LixCoO2 Thin Films

Journal

ADVANCED MATERIALS
Volume 23, Issue 36, Pages 4141-+

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201101800

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Funding

  1. DGES-C'Nano Idf

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Resistive Switching Phenomena in LixCoO2 Thin Films A substantial resistive switching of LixCoO2 mixed-conductor thin films is observed for the first time. The occurrence of possible bipolar switching in these oxide thin films is suggested by current-voltage curves, investigated by conducting-probe atomic force microscopy (CP-AFM). The films are incorporated into an {Au/LixCoO2/p++Si} device and exhibit a significant resistive switching process involving a ratio of over four orders of magnitude.

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