Journal
ADVANCED MATERIALS
Volume 23, Issue 30, Pages 3431-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201101410
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Funding
- Japan Society for the Promotion of Science (JSPS)
- Grants-in-Aid for Scientific Research [23760634] Funding Source: KAKEN
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The first ambipolar oxide-based thin-film transistor (TFT) using an SnO channel is presented, demonstrating operation of a complementary-like inverter configured by two ambipolar SnO TFTs. Saturation mobilities of similar to 0.8 and similar to 5 x 10(-4) cm(2) V-1 s(-1) are obtained for the p-channel and n-channel modes, respectively, and the inverter shows a maximum voltage gain of similar to 2.5. This is the first demonstration of a complementary-like circuit using a single oxide semiconductor channel and provides an important step toward practical oxide electronics.
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