4.8 Article

Coexistence of Memristance and Negative Differential Resistance in a Nanoscale Metal-Oxide-Metal System

Journal

ADVANCED MATERIALS
Volume 23, Issue 15, Pages 1730-+

Publisher

WILEY-BLACKWELL
DOI: 10.1002/adma.201004497

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Funding

  1. Defense Advanced Research Projects Agency [HR0011-09-3-0001]

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We experimentally demonstrate and present an analytical model for a nanoscale metal/oxide/metal device that simultaneously exhibits memristance, based on oxygen vacancy drift, and current-controlled negative differential resistance, based on a metal-insulator transition instability. We show that this oxide nanodevice can be used to fabricate a continuously tunable voltage-controlled oscillator.

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