Journal
ADVANCED MATERIALS
Volume 23, Issue 18, Pages 2104-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201100081
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Funding
- Korea Science and Engineering Foundation (KOSEF) [R15 - 2008-006 - 03002-0, CLEA, NCRC]
- Korean Ministry of Knowledge Economy
- GIST
- National Research Laboratory
- Korean Ministry of Education, Science and Technology
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Unipolar organic resistive memory devices with cell sizes of 2 mu m and 100 nm are demonstrated by a nonaqueous direct metal-transfer (DMT) method, presenting high ON/OFF ratios and reliable memory performance. The developed DMT method can be extensively utilized to fabricate crossbar array devices with nanometer scale junctions, demonstrating the feasibility of highly integrated organic memory device applications.
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