☆ 4.8 Article

Room-Temperature Fabrication of Ultrathin Oxide Gate Dielectrics for Low-Voltage Operation of Organic Field-Effect Transistors

ADVANCED MATERIALS (2011)

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Journal

ADVANCED MATERIALS
Volume 23, Issue 8, Pages 971-974

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201003641

Keywords

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Categories

Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter

Funding

  1. Thomas V. Jones Stanford Graduate Fellowship
  2. Toshiba Corporation through the Center for Integrated Systems at Stanford University

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