Journal
ADVANCED MATERIALS
Volume 23, Issue 35, Pages 4107-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201101291
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Funding
- Enterprise Ireland [PC/2009/0215]
- EPSRC [GR/S12074/01]
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A process to fabricate solution-processable thin-film transistors (TFTs) with a one-step self-aligned definition of the dimensions in all functional layers is demonstrated. The TFT-channel, semiconductor materials, and effective gate dimention of different layers are determined by a one-step imprint process and the subsequent pattern transfer without the need for multiple patterning and mask alignment. The process is compatible with fabrication of large-scale circuits.
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