Journal
ADVANCED MATERIALS
Volume 23, Issue 29, Pages 3272-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201100507
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Funding
- Korea government (MEST) [2010-0023798]
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Solid electrolyte memories utilizing voltage-induced resistance change display the capability of multilevel switching, but understanding of the microscopic switching mechanism still is incomplete. Here, in situ TEM observations of voltage-induced changes in the microstructure of a solid electrolyte memory are reported, revealing that the multilevel switching originates from the growth of multiple conducting filaments with nanometer-sized diameter and spacing.
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