Anodized Aluminum Oxide Thin Films for Room-Temperature-Processed, Flexible, Low-Voltage Organic Non-Volatile Memory Elements with Excellent Charge Retention

A flexible organic non-volatile memory transistor on a 50 mu m polyethylene naphtalate (PEN) substrate is presented. The gate and floating gate dielectric are prepared by potentiostatic anodization of aluminum, resulting in dense aluminum oxide high-k dielectric films. Such memory transistors show tuneable program and erase voltages and a large charge retention time.