Journal
ADVANCED MATERIALS
Volume 23, Issue 33, Pages 3847-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201102132
Keywords
-
Categories
Funding
- National Science Foundation [DMR-05-20020, 07-05054, 09-07523, 11-04530]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1104530, 1120901] Funding Source: National Science Foundation
Ask authors/readers for more resources
Resistance switching memory operating by a purely electronic switching mechanism, which was first realized in Pt-dispersed SiO2 thin films, satisfies criteria including high uniformity, fast switching speed, and long retention for non-volatile memory application. This resistive element obeys Ohm's law for the area dependence, but its resistance exponentially increases with the film thickness, which provides new freedom to tailor the device characteristics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available