4.8 Article

Solution-Crystallized Organic Field-Effect Transistors with Charge-Acceptor Layers: High-Mobility and Low-Threshold-Voltage Operation in Air

Journal

ADVANCED MATERIALS
Volume 23, Issue 29, Pages 3309-+

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201101027

Keywords

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Funding

  1. NEDO, Japan
  2. MEXT, Japan [22245032, 21108514]
  3. Grants-in-Aid for Scientific Research [21108514, 22245032, 22245001, 23686005, 23245041] Funding Source: KAKEN

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High-mobility solution-processed organic transistors are developed based on a hybrid of solution-crystallized air-stable organic semiconductor 2,7-dioctyl[1] benzo thieno[3,2-b][1] benzothiophene (C8-BTBT) and 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ) top layers. Charge mobility as high as 6 cm2/Vs is achieved, owing to the almost perfectly periodic crystal packing and efficient charge supply from the acceptor.

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