Journal
ADVANCED MATERIALS
Volume 22, Issue 15, Pages 1731-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200903469
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Funding
- National Natural Science Foundation of China [20676034, 20876046]
- Ministry of Education of China [309013]
- Shanghai Municipal Educational Commission [08GG10]
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An ITO/TPAPAM-GO/Al memory device (see figure; ITO = indium tin oxide, TPAPAM-GO = graphene oxide covalently grafted with triphenylamine-based polyazomethine) exhibits typical bistable electrical switching and a nonvolatile rewritable memory effect with a turn-on voltage of -1.0 V and an ON/OFF-state current ratio of more than 10(3). Both ON and OFF state are stable under a constant voltage stress and survive up to 10(8) read cycles at a read voltage of -1.0 V.
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