4.8 Article

Stable Switching Characteristics of Organic Nonvolatile Memory on a Bent Flexible Substrate

Journal

ADVANCED MATERIALS
Volume 22, Issue 28, Pages 3071-3075

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200904441

Keywords

-

Funding

  1. National Research Laboratory (NRL)
  2. National Core Research Centre (NCRC)
  3. Korean Ministry of Education, Science and Technology (MEST)
  4. Gwangju Institute of Science and Technology
  5. National Research Foundation of Korea [2007-0055761, 2008-0062153] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

Ask authors/readers for more resources

Organic nonvolatile memory devices fabricated on flexible substrates showed rewritable and nearly consistent switching characteristics, regardless of the bending circumstances. This stable memory performance with bending stress is a promising property for the practical memory devices in future flexible electronics.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.8
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available