4.8 Article

Three-Dimensional Integration of Organic Resistive Memory Devices

Journal

ADVANCED MATERIALS
Volume 22, Issue 44, Pages 5048-+

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201002575

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Funding

  1. Ministry of Education, Science and Technology of Korea
  2. MKE/KEIT
  3. National Research Foundation of Korea [2007-0055761] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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Organic memory: Our three-dimensionally (3D) stacked 8 x 8 cross-bar array organic resistive memory devices show non-volatile memory switching behavior, in which individual memory cells in the different layers can be independently controlled and monitored. The 3D stackable organic memory devices will enable achieving highly integrable organic memory devices and other organic-based electronics with much increased cell density.

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