Journal
ADVANCED MATERIALS
Volume 22, Issue 36, Pages 4014-4019Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201000618
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Funding
- Institute of Physics (IOP)
- Chinese Academy of Sciences (CAS)
- Science Foundation of CAS [20091111100202]
- National Science Foundation of China (NSFC) [10974226]
- National 973 Project of China [2010CB934202]
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A highly controllable, dry, anisotropic etching technique for graphene sheets has been achieved using hydrogen plasma etching. Zigzag edge formation was achieved by starting the etching at edges and defects and depends strongly on crystallographic orientation of the graphene. This dry, anisotropic etching approach combined with the standard lithographic technique is ideal for scalable graphene tailoring because the etching rates can be precisely controlled and the quality of the graphene can be preserved.
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