4.8 Article

Low-Voltage Ring Oscillators Based on Polyelectrolyte-Gated Polymer Thin-Film Transistors

Journal

ADVANCED MATERIALS
Volume 22, Issue 1, Pages 72-+

Publisher

WILEY-BLACKWELL
DOI: 10.1002/adma.200901850

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Funding

  1. Swedish Foundation for Strategic Research (OPEN)
  2. Knut and Alice Wallenberg Foundation, VINNOVA
  3. Royal Swedish Academy of Sciences
  4. Swedish Research Council

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A polyanionic electrolyte is used as gate insulator in top-gate p-channel polymer thin-film transistors. The high capacitance of the polyelectrolyte film allows the transistors and integrated circuits to operate below 1.5V. Seven-stage ring oscillators that operate at supply voltages down to 0.9V and exhibit signal propagation delays as low as 300 mu s per stage are reported.

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