High-Mobility Ambipolar Transistors and High-Gain Inverters from a Donor-Acceptor Copolymer Semiconductor

High-performance ambipolar transistors and inverters are demonstrated using a new donor-acceptor copolymer semiconductor. The ambipolar transistors show electron and hole mobilities of up to 0.04 and 0.003 cm(2) V-1 s(-1), respectively. Voltage transfer curves of the inverters made on common gold electrodes showed sharp switching with a gain of 30.