Journal
ADVANCED MATERIALS
Volume 22, Issue 20, Pages 2260-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200903312
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- DARPA Strategic Technology Office
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Novel infrared-to-visible light upconversion devices are demonstrated by fabricating an organic light-emitting diode with an infrared-sensitizing layer. With a SnPc:C-60 mixed layer as an infrared absorber and fac-tris(2-phenylpyridinato) iridium (III) (Irppy(3)) as an emitter, an infrared-to-green up-conversion device is demonstrated under 830-nm irradiation (see figure, ITO=indium tin oxide). The maximum photon-to-photon conversion efficiency is 2.7% at 15V.
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