Journal
ADVANCED MATERIALS
Volume 22, Issue 42, Pages 4749-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201002134
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Funding
- NSF [DMS 0706436, CMMI 0403671, ENG/CMMI 112024]
- BES DOE [DE-FG02-07ER46394]
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Blue/near-UV light-emitting diodes composed of position controlled n-ZnO nanowires arrays and a p-GaN thin film substrate are demonstrated. Under forward bias, each single nanowire is a light emitter. By Gaussian deconvolution of the emission spectrum, the origins of the blue/near-UV emission are assigned specifically to three distinct electron-hole recombination processes. The LEDs give an external quantum efficiency of 2.5%.
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