Journal
ADVANCED MATERIALS
Volume 22, Issue 3, Pages 411-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200901493
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- Alexander von Humboldt Stiftung (AvH)
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The resistive switching properties of Sr2TiO4 thin films with specific defect distribution have been studied. junctions of Sr2TiO4 thin films containing a high density of defects show well-pronounced resistive switching properties while those with well-ordered microstructure exhibited insignificant hysteresis windows. This work clearly demonstrates the crucial role of defects for the microscopic switching mechanisms in oxide thin films.
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