Journal
ADVANCED MATERIALS
Volume 22, Issue 37, Pages 4151-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201001413
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Funding
- International Center for Materials Nanoarchitectonics (MANA) of the National Institute for Materials Science (NIMS), Tsukuba, Japan
- JSPS [22760517]
- JSPS in Japan
- National Natural Science Foundation of China [20671050]
- National Basic Research Program of China [2007CB936302]
- Grants-in-Aid for Scientific Research [22760517] Funding Source: KAKEN
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Individual ZrS2-nanobelt field-effect transistors were fabricated using a photolithography process. Temperature-dependent electrical transport revealed different electrical conductivity mechanism at different working temperature regions. ZrS2-nanobelt photodetectors demonstrated a high-performance visible-light photoconductivity.
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