Journal
ADVANCED MATERIALS
Volume 22, Issue 19, Pages 2164-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200903719
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Funding
- MEST [2009-0083200, 2009-0065619, 2008-8-1807]
- EPB center [2009-0063304]
- Priority Research Centers Program [2009-0094037]
- World Class University (WCU) [R31-2008-000-10059-0]
- Ministry of Education, Science & Technology (MoST), Republic of Korea [R31-2008-000-10059-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2005-2001325, 2009-0090897] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Novel p-type semiconductors can be found in these extraordinary comb structures. The GeSe combs are selectively formed by a vaporization-condensation-recrystallization (VCR) process using bulk GeSe powder as the precursor source. They have a flat body plate part and extended wire finger parts, both of which have identical crystal structures. The GeSe comb field-effect transistor device displays both p-type semiconducting and photo-switching behavior.
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