High-Speed Spatial Atomic-Layer Deposition of Aluminum Oxide Layers for Solar Cell Passivation

Al(2)O(3) thin films deposited at rates as high as 1.2 nm s(-1) using spatially separated atomic layer deposition show excellent solar cell surface passivation properties, i.e., recombination velocities of <2 cm s(-1). This disruptive ALD concept opens the way for cost-effective manufacturing with high industrial throughput numbers.