Journal
ADVANCED MATERIALS
Volume 22, Issue 5, Pages 647-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200901383
Keywords
-
Categories
Funding
- Austrian Science Funds ( [S9710]
- Osterreichische Forschungsforderungsgesellschaft [818046]
- Austria Wirtschaftsservice
Ask authors/readers for more resources
A novel light-sensing scheme based on a silicon/fullerene-derivative heterojunction allows optoelectronic detection in the near- to mid-infrared (IR), which is fully compatible with complementary metal oxide semiconductor (CMOS) technology. Although silicon and the fullerene derivative do not absorb in the IR, a heterojunction of these materials absorbs and generates a photocurrent (PC) in the near-to mid-IR, presumably caused by an interfacial absorption mechanism.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available