Journal
ADVANCED MATERIALS
Volume 22, Issue 26-27, Pages 2957-2961Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200904327
Keywords
-
Categories
Funding
- National Science Foundation [MRSEC DMR 0520495]
- Semiconductor Research Corporation
Ask authors/readers for more resources
The non-volatile polarization of a ferroelectric is a promising candidate for digital memory applications. Ferroelectric capacitors have been successfully integrated with silicon electronics, where the polarization state is read out by a device based on a field effect transistor configuration. Coupling the ferroelectric polarization directly to the channel of a field effect transistor is a long-standing research topic that has been difficult to realize due to the properties of the ferroelectric and the nature of the interface between the ferroelectric and the conducting channel. Here, we report on the fabrication and characterization of two promising capacitor-less memory architectures.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available