Journal
ADVANCED MATERIALS
Volume 22, Issue 21, Pages 2371-2375Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200903711
Keywords
-
Categories
Funding
- EU through the EC [212311]
- EPSRC [EP/E023614/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/E023614/1] Funding Source: researchfish
Ask authors/readers for more resources
High mobility ambipolor polymer field-effect transistors based on a series of regioregular polyselenophenes are presented together with their morphological and optical properties. Balanced electron and hole mobilities on the order of 0.03 cm(2)V(-1)s(-1) are observed by employing a simple top-gate/bottom-contact configuration with photolithographically defined gold source/drain contacts. High gain complementary-like voltage inverters are demonstrated based on two identical ambipolar transistors.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available