Designed Organophosphonate Self-Assembled Monolayers Enhance Device Performance of Pentacene-Based Organic Thin-Film Transistors

Excellent device characteristics are measured for a pentacene-based thin film transistor where the SiO2 gate dielectric is terminated with a self-assembled monolayer of 9,10-dinaphthylanthracene-2-phosphonate in which calculated molecular spacings are about 0.7 nm. This creates channels that are on the order of the thickness of an aromatic pi system, which allows intercalation of pentacene units, favoring a pi-stacking motif for this first pentacene layer.