Journal
ADVANCED MATERIALS
Volume 22, Issue 24, Pages 2632-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200903756
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Funding
- XPS
- German Excellence Initiative via the Nanosystems Initiative Munich (NIM)
- Deutsche Forschungsgemeinschaft (DFG) [EI 518/5-1]
- Universitat Bayern e.V.
- Compint graduate school
- German Excellence Initiative
- Alexander von Humboldt Foundation
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Charge transfer between GaN and organic self-assembled monolayers is demonstrated. Alignment of charge-transfer levels allows for photocatalytic cleavage of aliphatic chains on the semiconductor surface. By variation of the Fermi level within GaN and by comparison to SiC, it is shown that charge transfer can be suppressed and the stability of molecular monolayers can be enhanced in the absence of the appropriate energetic alignment.
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