4.8 Article

ZnS Branched Architectures as Optoelectronic Devices and Field Emitters

Journal

ADVANCED MATERIALS
Volume 22, Issue 21, Pages 2376-2380

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200903643

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Funding

  1. Chinese Academy of Sciences [GJHZ200815]
  2. Australian Research Council
  3. UQ

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A unique ZnS branched architecture was fabricated by a facile thermal evaporation method. Stable UV emission at 327 nm and superior field emission with a low turn-on field, a high field-enhancement factor, a large current density, and small fluctuation were observed.

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