Journal
ADVANCED MATERIALS
Volume 22, Issue 6, Pages 697-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200902303
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Funding
- National Science Foundation
- Toshiba Corporation through the Center for integrated Systems at Stanford
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High-mobility PBTTT thin-film transistors are modeled with a mobility edge model and compared with P3HT Their improved performance is not due to a low trap density but rather due to high mobility in the crystallites. Characterization of delaminated films with transmission electron microscopy and atomic force microscopy indicates terraces that are composed of nanometer-scale features (see figure).
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