Journal
ADVANCED MATERIALS
Volume 23, Issue 7, Pages 902-+Publisher
WILEY-BLACKWELL
DOI: 10.1002/adma.201002946
Keywords
-
Categories
Funding
- National Science Council of Taiwan
Ask authors/readers for more resources
Very high performance Ni/GeO(x)/HfON/TaN non-volatile resistive memory is fabricated using the covalently bonded dielectric GeO(x) and metal oxynitride HfON, as well as low cost electrodes. The device shows low set and reset powers, good 85 degrees C retention, and 10(5) endurance, which are near to the characteristics of existing commercial flash memory.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
