Journal
ADVANCED MATERIALS
Volume 22, Issue 21, Pages 2333-2337Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200903761
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Funding
- NSF at the Northwestern University Materials Research Center [DMR-0520513]
- AFOSR [FA9550-08-1-0331]
- NSF-NSEC
- NSF-MRSEC
- Keck Foundation
- State of Illinois
- Northwestern University
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High-performance flexible transparent thin-film transistors (TFTs) are demonstrated using amorphous zink indium tin oxide (ZITO) transparent oxide conductor electrodes, an amorphous ZITO transparent oxide semiconductor channel, and a vapor-deposited self-assembled nanodielectric (v-SAND) gate insulator. These TFTs exhibit a large field-effect mobility of 110 cm(2)V(-1)s(-1), a current on/off ratio of 10(4), and a low operating voltage of 1.0V, along with very good optical transparency and mechanical flexibility.
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