Journal
ADVANCED MATERIALS
Volume 22, Issue 11, Pages 1253-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200903420
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Funding
- US Army CERDEC
- Heeger Center for Advanced Materials at the Gwangju Institute of Science and Technology (GIST)
- Ministry of Science & Technology of Korea
- Natural Sciences and Engineering Research Council (NSERC) of Canada
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The thermal stability of the poly(2,7-carbazole) derivative (PCDTBT) is investigated. UV visible absorption spectra and X-ray photoelectron spectroscopy data demonstrate that the electronic structure of PCDTBT is stable in air at annealing temperatures up to 150 degrees C and in N-2 even after exposure to temperatures up to 350 degrees C. Field-effect transistors fabricated with PCDTBT show stable characteristics and hole mobility up to 150 degrees C (air) and 350 degrees C (N-2).
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