Journal
ADVANCED MATERIALS
Volume 21, Issue 25-26, Pages 2632-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200900375
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This review article introduces resistive switching processes that are being considered for nanoelectronic nonvolatile memories. The three main classes are based on an electrochemical metallization mechanism, a valence change mechanism, and a thermochemical mechanism, respectively. The current understanding of the microscopic mechanisms is discussed and the scaling potential is outlined.
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