Journal
ADVANCED MATERIALS
Volume 21, Issue 38-39, Pages 3859-3873Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200901136
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Funding
- Engineering and Physical Sciences Research Council (EPSRC)
- Cambridge integrated Knowledge Center (CIKC)
- Hitachi
- EPSRC [EP/E023614/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/E023614/1] Funding Source: researchfish
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In this article, we review current understanding of the reliability of organic field-effect transistors, with a particular focus on degradation of device characteristics under bias stress conditions. We discuss the various factors that have been found to influence the operational stability of different material systems, including dependence on stress voltage and duty cycle, gate dielectric, environmental conditions, light exposure, and contact resistance. A key question concerns the role of extrinsic factors, such as oxidation of presence of moisture, and that of intrinsic factors, such as the inherent structural and electronic disorder that is present in thin organic semiconductor films. We also review current understanding of the microscopic defects that could play a role in charge trapping in organic semiconductors.
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