Journal
ADVANCED MATERIALS
Volume 21, Issue 7, Pages 813-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200800703
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Funding
- National Natural Science Foundation [60736004, 50673093, 20721061, 10774003, 10434010, 90606023, 20731160012]
- Major State Basic Research Development Program, MOST of China [2002CB613505, 2007CB936200]
- Chinese Academy of Sciences and the Sony Corporation, Japan
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A facile scalable and low-cost gas-treatment method for selectively etching semiconductor single-walled carbon nanotubes (SWNTs) is developed. Using SO3 gas as the etchant at a temperature of 400 degrees C, semiconductor SWNTs can be selectively and efficiently removed, and after this gas treatment samples enriched with metallic SWNTs can be obtained.
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