Journal
ADVANCED MATERIALS
Volume 22, Issue 9, Pages 982-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200902740
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Funding
- New Energy and Industrial Technology Development Organization (NEDO) of Japan
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Flexible transistors and circuits based on dinaphtho-[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT), a conjugated semiconductor with a large ionization potential (5.4 eV), are reported. The transistors have a mobility of 0.6 cm(2) V(-1) s(-1) and the ring oscillators have a stage delay of 18 mu s. Due to the excellent stability of the semiconductor, the devices and circuits maintain 50% of their initial performance for a period of 8 months in ambient air.
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