Journal
ADVANCED MATERIALS
Volume 21, Issue 46, Pages 4726-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200901285
Keywords
-
Categories
Funding
- CSIR, New Delhi
- JNCASR
Ask authors/readers for more resources
Boron- and nitrogen-doped graphenes are are prepared by the arc discharge between carbon electrodes or by the transformation of nanodiamond under appropriate atmospheres. Using a combination of experiment and theories based on first principles, systematic changes in the carrier-concentration and electronic structure of the doped graphenes are demonstrated. Stiffening of the G-band mode and intensification of the defect-related D-band in the Raman spectra are also observed.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available