4.8 Article

Efficiency Enhancement of GaAs Photovoltaics Employing Antireflective Indium Tin Oxide Nanocolumns

Journal

ADVANCED MATERIALS
Volume 21, Issue 16, Pages 1618-+

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200802563

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Funding

  1. National Science Council in Taiwan [96-2221-E-009-095-MY3, 97-2120-M-006-009]

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Highly-oriented indium tin oxide nano-columns are prepared by glancing-angle deposition with nitrogen. The tapered column profiles, which function as a graded-refiractive-index layer, offer superior antireflective characteristics. The nano-structured material serves as the conductive antireflective layer for GaAs solar cells, demonstrating a viable efficiency-boosting strategy for next-generation photovoltaics.

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