Journal
ADVANCED MATERIALS
Volume 22, Issue 9, Pages 933-945Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200900759
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Funding
- Dutch science foundation NWO/FOM
- Zernike Institute for Advanced Materials
- EC [ONE-P 212311]
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A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low-cost memory technology. In this Review Article we discuss the latest developments in this area with a focus on three of the most important device concepts: ferroelectric capacitors, field-effect transistors, and diodes. Integration of these devices into larger memory arrays is also discussed.
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