4.8 Article

Utilizing Highly Crystalline Pyroelectric Material as Functional Gate Dielectric in Organic Thin-Film Transistors

Journal

ADVANCED MATERIALS
Volume 21, Issue 8, Pages 910-+

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200801831

Keywords

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Funding

  1. Korean Government (MOEHRD, Basic Research Promotion Fund) [KRF-2006-311-D00574]
  2. Ministry of Knowledge Economy (MKE)
  3. Korea Industrial Technology Foundation (KOTEF)

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Highly crystalline P(VDF-TrFE) materials have a large remnant polarization that causes the I-D-V-D curves to have no current saturation in the region where they normally would. This high crystallinity also results in a positive pyroelectricity, which is different from the conventional low response and nonlinear negative pyroelectricity.

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