Journal
ADVANCED MATERIALS
Volume 21, Issue 24, Pages 2520-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200801817
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Funding
- Abo Akaclemi Foundation
- Academy of Finland through the National Center of Excellence
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A new type of low-voltage orgranic transistor is manufactured using a thick ion-conducting membrane as gate insulator. High current output at 1 V of operation is achieved. The versatile properties of the novel insulator are shown by driving an electrochromic display pixel and a transistor on the same membrane.
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