Journal
ADVANCED MATERIALS
Volume 21, Issue 19, Pages 1941-1944Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200803013
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Funding
- Ministry of Science & Technology of Korea [M60605000005-06A0500-00510]
- Heeger Center for Advanced Materials at the Gwangju Institute of Science and Technology, Gwangju, Korea
- Samsung Advanced Institute of Technology
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A thin capping layer of titanium sub-oxide (TiOx) prepared by sol-gel synthesis from titanium alkoxides extends the lifetime of organic FETs. The TiOx layer functions as an 'active' passivation/barrier layer that actually removes oxygen and water vapor from the organic semiconductor. The results demonstrate a significant improvement in the lifetime of organic field-effect transistors when exposed to air.
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