Journal
ADVANCED MATERIALS
Volume 21, Issue 16, Pages 1631-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200802934
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Funding
- National Natural Science Foundation of China [60736004, 50673093, 20721061, 60671047, 20825208]
- Major State Basic Research Development Program [2006CB806203, 2006CB932103]
- National High-Tech Research Development Program [2008AA03Z101]
- Chinese Academy of Sciences
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The stability and performance of N,N'-dioctyl perylene diimide (PDI-C8) and N,N'-ditridecyl perylene diimide (PDI-C13) thin-film transistors (TFTs) are increased using optimized growth rates and sulfur-modified top-contact electrodes. Changing the grain size and the depth of grain boundaries by controlling film growth rate is another way of increasing the air stability of perylene diimides without electron-withdrawing groups. [GRAPHICS]
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