4.8 Article

The Inlaid Al2O3 Tunnel Switch for Ultrathin Ferroelectric Films

Journal

ADVANCED MATERIALS
Volume 21, Issue 28, Pages 2870-+

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200802924

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Funding

  1. Korean government
  2. National Natural Science Foundation of China [60776054]
  3. Shanghai Pujiang Program [07pj14008]

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Ferroelectric switching in ultrathin Al2O3/PZT bilayers is studied and used to modulate the applied electric field, allowing the development of novel applications of the combined dielectric tunnel switch/ferroelectric functional layer that can assist in the development of completely new types of electronic, electromechanical, and electrochemical devices.

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