Novel ZrInZnO Thin-film Transistor with Excellent Stability

Novel ZrInZnO semiconductor materials to resolve transistor instability for active-matrix organic light-emitting diodes are proposed. The ZrInZnO film is prepared using a cosputtering method, and presents a nanocrystal structure embedded in an amorphous matrix. The thin-film transistors fabricated show good electrical performance as well as excellent stability under long-term bias stresses.