Journal
ADVANCED MATERIALS
Volume 21, Issue 47, Pages 4845-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200901215
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Funding
- National Science Council, Taiwan [96-2221-E-001-017-MY2]
- Academia Sinica, Taiwan
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C60-based thin-film transistors are fabricated through solution processing. On rigid indium tin oxide (ITO) glass, the transistors display electron mobilities as high as 0.21 cm(2) V-1 s(-1) and a threshold voltage of 0.7V, only slightly lower than those of organic thin-film transistors prepared through vacuum deposition. On ITO-coated PET substrates, the mobilities in the flexible devices (see image) are approximately one order of magnitude lower than those of devices prepared on rigid glass substrates.
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