Journal
ADVANCED MATERIALS
Volume 21, Issue 5, Pages 559-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200802123
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Funding
- Natural Sciences and Engineering Research Council of Canada NSERC
- Ontario Centers of Excellence
- University of Toronto
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Inverse crystalline silicon opals (i-cSi-os) in the solid state and hydrogen-plasma passivated are studied, and charge-tran sport measurements reveal for the first time that their electrical properties are acceptable for device applications. The omnidirectional photonic band gap of i-cSi-os can be uniquely integrated with the semiconductivity of silicon, enhancing their photon-to-electron conversion efficiency.
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